Amorphous semiconductor method

Details Amorphous semiconductor method Amorphous semiconductor method

1982-03-05

1984-07-10

Weisstuch, Aaron

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

423349, 427 74, 427 86, 136258, 357 2, 357 30, C01B 3302, H01L 3118

Patent

active

044591632

ABSTRACT:
Preparation of amorphous semiconductor material that is suitable for use in a wide variety of devices by the pyrolytic decomposition of one or more gaseous phase polysemiconductanes, including polysilanes and polygermanes.

REFERENCES:
patent: 4237150 (1980-12-01), Wiesman
patent: 4237151 (1980-12-01), Strongin et al.
patent: 4357179 (1982-11-01), Adams et al.
R. M. Plecenik et al., "Preparation of Amorphous Hydrogenated Silicon by Chemical Vapor Deposition", IBM Tech. Disc. Bull; vol. 24, 1523-1524 (1981).

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