Amorphous semiconductor member and method of making the same

Details Amorphous semiconductor member and method of making the same Amorphous semiconductor member and method of making the same

1977-05-18

1979-12-04

Edlow, Martin H.

Metal treatment

Stock

Ferrous

357 4, 357 61, 357 63, 148 15, H01L 4500

Patent

active

041774736

ABSTRACT:
An amorphous semiconductor member includes an amorphous semiconductor material which is formed in a solid amorphous host matrix having structural configurations which have local rather than long-range order and electronic configurations which have an energy gap and a large electrical activation energy, and, added to the amorphous host matrix, a modifier material having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix for reducing substantially the activation energy thereof and, hence, increasing substantially the electrical conductivity of the semiconductor member substantially at room temperature and above. The amount of addition of the modifier material controls the range of electrical conductivity, and can be greater than dopant amounts usually used for doping semiconductors. The amorphous host matrix is normally of intrinsic-like conduction and the modifier material added thereto changes the same to extrinsic-like conduction. In one form of the invention, a primarily lone-pair amorphous semiconductor material having orbitals is utilized wherein the orbitals of the modifier material interact with the orbitals of the amorphous host matrix and form the electronic states in the energy gap. In another form, a primarily tetrahedral bonding amorphous semiconductor material is utilized wherein the orbitals of the modifier material, added primarily in a non-substitutional manner, interact with the amorphous host matrix and form the electronic states in the energy gap. In a further form, an amorphous semiconductor material containing boron is utilized wherein the orbitals of the modifier material interact with the amorphous host matrix and form the electronic states in the energy gap.

REFERENCES:
patent: 3688160 (1972-08-01), Nagasawa
patent: 3716844 (1973-02-01), Brodsky
patent: 3864717 (1975-02-01), Merrin
patent: 3983542 (1976-09-01), Ovishinsky
Shimakawa, Japan J. Appl. Phys., 10 (1971), pp. 1116-1117.
Petersen et al., IEEE Transactions on Electron Devices, vol. ED-23, No. 4, Apr. 1973, pp. 471-477.
Spear, Proceed. 5th Int. Conf. on Amorphous Semiconductors, Partenkirche, Fed. Rep. Germany, Sep. 3-8, 1973.

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