Amorphous semiconductor devices having increased switching speed

Details Amorphous semiconductor devices having increased switching speed Amorphous semiconductor devices having increased switching speed

1983-10-24

1986-05-13

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307256, 307460, 307479, 307480, 307317R, 357 2, 357 4, H03K 1704, H03K 1908

Patent

active

045889031

ABSTRACT:
A high speed digital electronic system includes a plurality of logic or switching circuits for providing one or more bits of discrete output in response to applied input signals. At least some of the circuits include devices switchable between at least two logic states, and are formed from materials of the type which exhibit increased switching speeds when maintained in a dynamic mode of operation. Signal source means apply to the system dynamic signals for maintaining the switchable devices in a dynamic mode of operation. The switchable devices are preferably formed from amorphous semiconductor alloys including silicon and may take the form of diodes to form AC logic AND gates, OR gates or a matrix selection circuit. The dynamic signals take the form of alternating major and minor clock pulses having a frequency between 10 and 40 megahertz. The logic circuits are arranged to form a binary adder.

REFERENCES:
patent: 4389713 (1983-06-01), Patel et al.
patent: 4438351 (1984-03-01), Schuermeyer
patent: 4485389 (1984-11-01), Ovshinsky et al.
patent: 4499557 (1985-02-01), Holmberg et al.
Fritzsche, "Physics of Instabilities in Amorphous Semiconductors", IBM J. Res. Develop., Sep. 1969, pp. 515-521.
Vogel et al, "Negative Capacitance in Amorphous Semiconductor Chalcogenide Thin Films", Applied Physics Letters, vol. 14, No. 7, Apr. 1969, pp. 216-218.
M. Matsumura, et al., "Switching Characteristics of Amorphous-Silicon Field-Effect-Transistors", Japanese Journal of Applied Physics, vol. 20, pp. L414-L416 (Jun. 1981).

Affiliated with

Also associated with

Rating

Amorphous semiconductor devices having increased switching speed does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amorphous semiconductor devices having increased switching speed, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous semiconductor devices having increased switching speed will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1771979