Amorphous semiconductor and amorphous silicon photovoltaic devic

Details Amorphous semiconductor and amorphous silicon photovoltaic devic Amorphous semiconductor and amorphous silicon photovoltaic devic

1983-11-17

1985-02-12

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

252 623C, 2525011, 252504, 252516, 357 2, 357 30, 420578, 420903, H01L 3104

Patent

active

044993315

ABSTRACT:
An amorphous silicon semiconductor of the general formula: a-Si.sub.(1-x-y) C.sub.x N.sub.y containing hydrogen and/or fluorine, which provides an amorphous silicon PIN junction photovoltaic device having an improved conversion efficiency when it is used as a P-type or N-type layer on the light impinging side of the PIN junction photovoltaic device. Also, the conversion efficiency of an amorphous silicon PIN junction photovoltaic device is improved by using a two-layer film structure of ITO and SnO.sub.2 as a transparent electrode for the photovoltaic device, with the SnO.sub.2 layer contacting the P or N layer. The improvement is particularly marked in the case of heterojunction photovoltaic devices.

REFERENCES:
patent: 4388482 (1983-06-01), Hamakawa et al.

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