Amorphous selenium flat panel x-ray imager for tomosynthesis...

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

Reexamination Certificate

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Reexamination Certificate

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07122803

ABSTRACT:
A flat panel x-ray imager exhibiting reduced ghosting effects and overvoltage protection by appropriate leakage current characteristics of the thin-film transistor array. A top electrode of a suitable material is directly on and in physical and electrical contact with an amorphous selenium-based charge generator layer, thereby reducing ghosting. The thin-film transistors have leakage current that rises relatively slowly with voltage across the transistor within a range that matches exposure through an object being imaged but rises at a sufficiently higher rate within a higher range to provide protection even when a corresponding region of the charge generator layer receives greater amounts of x-rays.

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