Amorphous photovoltaic elements

Details Amorphous photovoltaic elements Amorphous photovoltaic elements

1986-08-28

1988-03-01

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, H01L 3106

Patent

active

047283700

ABSTRACT:
Disclosed are pin or nip type amorphous photovoltaic elements having the i-type layer comprised of an a-SiGe: H film, which are characterized in that an i-type amorphous silicon buffer layer is disposed between the layers of p-type and i-type and thus, the mutual diffusion of impurities and/or elements added to the i-type and/or the p-type layers through the p/i boundary is effectively restricted due to the presence of the buffer layer. As a result the formation of defects at the p/i boundary and the deterioration of the p-type layer are effectively prevented, and the properties important to these kinds of devices, such as Voc, Jsc, FF being substantially improved, thereby making it possible to provide photovoltaic elements such as solar batteries having a practically acceptable long life span and a high reliability.

REFERENCES:
patent: 4471155 (1984-09-01), Mohr et al.
patent: 4542256 (1985-09-01), Wiedeman

Affiliated with

Also associated with

Rating

Amorphous photovoltaic elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Amorphous photovoltaic elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Amorphous photovoltaic elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-995829