Amorphous photoelectric converting device

Details Amorphous photoelectric converting device Amorphous photoelectric converting device

1988-09-09

1989-10-24

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136258, 357 30, H01C 3106

Patent

active

048759449

ABSTRACT:
An amorphous photoelectric converting device that remains efficient despite exposure to heat over long periods of time is formed by placing one on top of the other a plurality of photovoltaic elements each comprising a thin film of p-i-n structure. The p-type layer and the n-type layer of adjacent elements are made of microcrystalline silicon so that good ohmic contact is established, and the p-type layer of microcrystalline silicon contains boron in an amount sufficient to neutralize the donor atoms which diffuse from the adjacent n-type layer when the device is left to stand at high temperatures for a long period of time. The amount of boron, however, is limited to such an extent that the boron atoms do not adversely affect the initial desired characteristics of the device. A preferred range of boron levels is 3.times.10.sup.20 to 1.times.10.sup.21 atoms/cm.sup.3.

REFERENCES:
patent: 4479028 (1984-10-01), Sato et al.
patent: 4609771 (1986-09-01), Guha et al.
patent: 4737196 (1988-04-01), Yukimoto
patent: 4776894 (1988-10-01), Watanabe et al.

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