Amorphous photoconductive material and photosensor employing the

Details Amorphous photoconductive material and photosensor employing the Amorphous photoconductive material and photosensor employing the

1990-12-28

1992-10-13

Mintel, William

Fishing, trapping, and vermin destroying

357 2, 357 63, 357 61, 357 59, 437101, 437904, H01L 2714

Patent

active

051555670

ABSTRACT:
A photoconductive material comprises a photocarrier generating zone using a wide-band gap material and a photocarrier moving zone using an amorphous silicon material. A photocarrier generating zone including a silicon atom as a principal atom comprises an amorphous silicon which contains at least one kind of atom selected from a group including oxygen, nitrogen and carbon and also contains an atom which terminates a dangling bond of a silicon. This photoconductive material can be used for various devices because of its wide-band gap and high photosensitivity.

REFERENCES:
patent: 4460670 (1984-07-01), Ogawa et al.
patent: 4605941 (1986-08-01), Ovshinsky et al.
Morimoto et al., "Structure and Defects in Amorphous Si--O Films," Japanese Journal of Applied Physics, vol. 26, No. 1, Jan. 1987, pp. 22-27.
Tsu et al., "Effects of the Nearest Neighbors and the Alloy Matrix on SiH Stretching Vibrations in the Amorphous SiO.sub.r :H(0<r<2) Alloy System," The American Physical Society, Physical Review B, vol. 40, No. 3, Jul. 15, 1989--II, pp. 1795-1805.
Comber et al., "The Effect of Preparation Conditions and of Oxygen and Hydrogen on the Properties of Amorphous Silicon," Proceedings of the Fifth International Conference on Amorphous and Liquid Semiconductors, Sep. 3-8, 1973, pp. 245-250.

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