Amorphous layers in a magnetic tunnel junction device

Details Amorphous layers in a magnetic tunnel junction device Amorphous layers in a magnetic tunnel junction device

2008-05-06

2008-05-06

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120

Reexamination Certificate

active

11080867

ABSTRACT:
An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.

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