Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-02-02
2011-10-25
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE29151, C174S13700R
Reexamination Certificate
active
08044402
ABSTRACT:
An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.
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Hayashi Ryo
Kaji Nobuyuki
Yabuta Hisato
Canon Kabushiki Kaisha
Dickey Thomas L
Fitzpatrick ,Cella, Harper & Scinto
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