Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-07-28
2000-11-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257790, 257687, 257701, 257702, 257632, 257636, H01L 2348, H01L 2352, H01L 2940
Patent
active
061507199
ABSTRACT:
A hard layer of amorphous hydrogenated carbon (DLC) overlies a polymer film structure and a plurality of soft layers of DLC alternate with a plurality of hard layers of DLC over the barrier base to form a corrosion resistant structure. The polymer film structure and a circuit chip can be elements of a circuit module. The DLC and the polymer film structure can have vias extending to contact pads, and a pattern of electrical conductors can extend through the vias to the contact pads. In one embodiment the DLC forms a hermetic (and therefore corrosion resistant) seal over the polymer film structure.
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U.S. Patent Application, "Structure And Fabri Cation Method For Thin Film Capacitors" By R.J. Saia, Et Al No. 08/566,616 filed Dec. 4, 1995. Now U.S. Ser. No. 5736448 Apr. 7, 1998.
Durocher Kevin Matthew
Rose James Wilson
Saia Richard Joseph
Agosti Ann M.
Breedlove Jill M.
General Electric Company
Saadat Mahshid
Warren Matthew E.
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