Amorphous, hydrogenated carbon as an insulator in device fabrica

Details Amorphous, hydrogenated carbon as an insulator in device fabrica Amorphous, hydrogenated carbon as an insulator in device fabrica

1994-03-09

1995-06-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437941, H01L 218234

Patent

active

054279852

ABSTRACT:
Amorphous, hydrogenated carbon (a-C:H) having a low interfacial state density is obtained when a-C:H layers that had been produced on a semiconductor substrate through plasma deposition are subjected to a hydrogen treatment at an increased pressure and increased temperature.

REFERENCES:
patent: 5055421 (1991-10-01), Birkle et al.
patent: 5196907 (1993-03-01), Birkle et al.
Wolf, Silicon Processing for the VLSI Era vol. 1, Process Technology, 220-223, copyright 86 Lattice Press.
Chou et al., Japanese Journal of Applied Physics vol. 32, pp. L539-L542 (Date Unknown).
Chou et al., Journal of Applied Physics vol. 75, No. 9, 15 Feb. 1994 pp. 2257-2263.
Frauenheim, T. et al., "Electrical Transport and Electronic Properties of Amorphous Carbon Thin Films," Thin Solid Films, vol. 182 (1989), pp. 63-78.
Ivanovsky, G. et al., "Diamond-Like Carbon Films: Deposition Processes, Properties and Applications," Proc. Electrochem. Soc., 91-8 (1991), pp. 645-652.
Clausing, R. et al., "Diamond and Diamond-like Films and Coatings", NATO ASI Series B (Physics), vol. 266, Plenum Press, New York 1991, pp. 427-437.
Nicollian, E. et al., "MOS (Metal Oxide Semiconductor) Physics and Technology", John Wiley & Sons, New York 1982, pp. 18-22.
Oh, J. et al., "InP MIS Structures with Diamondlike Amorphous Carbon Films Deposited by Ion-Beam Sputtering and From Plasma" Solid-State Electronics, vol. 29, No. 9 (1986), pp. 933-940.
Kapoor, V. et al., "Diamondlike carbon films on semiconductors for insulated-gate technology", Journal of Vacuum Science & Technology, vol. 4 (1986), pp. 1013-1017.

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