Amorphous devices and interconnect system and method of fabricat

Details Amorphous devices and interconnect system and method of fabricat Amorphous devices and interconnect system and method of fabricat

1981-01-14

1984-09-11

Edlow, Martin H.

357 2, 357 67, H01L 2348, H01L 4500

Patent

active

044713762

ABSTRACT:
An amorphous semiconductor device on a silicon substrate having a first level contact and interconnect of aluminum and coextensive layer of molybdenum and a second level contact and interconnect of molybdenum and coextensive layer of aluminum. Contacts to the amorphous device are by the two molybdenum layers and the contact of the second level contacts to the substrate is through the first level contacts.
The method of fabrication includes forming a first aluminum layer on and through contact openings in a first insulating layer and a first layer of molybdenum on the aluminum, coetching these layers to form first level contacts and interconnects forming a second layer of insulating material, forming a layer of amorphous semiconductor material through an opening in the second insulating layer; forming a second layer of molybdenum over the substrate and through contact openings in the second insulating layer and a second layer of aluminum on the second layer of molybdenum, and coetching the second layers of molybdenum and aluminum to form second level contacts and interconnects.

REFERENCES:
patent: 3409809 (1968-11-01), Diehl
patent: 3675090 (1972-07-01), Neale
patent: 3699543 (1972-10-01), Neale
patent: 3946426 (1976-03-01), Sanders
patent: 4151545 (1979-04-01), Schnepf
IBM Technical Disclosure Bulletin, vol. 15, No. 2, Jul. 1972, pp. 577-579.

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