Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-11-15
2005-11-15
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S050000, C257S209000, C257S200000, C257S903000, C257S076000, C438S131000, C438S667000, C438S600000
Reexamination Certificate
active
06965156
ABSTRACT:
A metal-to-metal antifuse having a lower metal electrode, a lower thin adhesion promoting layer disposed over the lower metal electrode, an amorphous carbon antifuse material layer disposed over the thin adhesion promoting layer, an upper thin adhesion promoting layer disposed over said antifuse material layer, and an upper metal electrode. The thin adhesion promoting layers are about 2 angstroms to 20 angstroms in thickness, and are from a material selected from the group comprising SixCyand SixNy. The ratio of x to y in SixCyis in a range of about 1+/−0.4, and the ratio of x to y in SixNyis in a range of about 0.75+/−0.225.
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Gangopadhyay Shubhra M.
Hawley Frank W.
Issaq A. Farid
Lubguban Jorge A.
McCollum John L.
Actel Corporation
Erdem Fazli
Flynn Nathan J.
Sierra Patent Group Ltd.
Texas Tech University System
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