Ammonothermal growth of chalcogenide single crystal materials

Details Ammonothermal growth of chalcogenide single crystal materials Ammonothermal growth of chalcogenide single crystal materials

1997-11-05

1999-05-11

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having growth from a solution comprising a solvent which is...

117 72, C30B7/10

Patent

active

059023961

ABSTRACT:
Single crystals of binary and ternary compounds of alkaline earth and a chalcogen, with or without a transition element, are grown by: charging a reaction vessel with an alkaline earth chalcogenide, with or without a transition element or a halide thereof, an acidic mineralizer, and anhydrous ammonia to where the fill factor in the reaction vessel is 30-95%; sealing the reaction vessel to the outside atmosphere; heating the contents of the reaction vessel to a temperature of at least 300.degree. C. until single crystal materials visible to the eye form in the reaction vessel; cooling the contents of the reaction vessel; and extracting the single crystal materials from the reaction vessel.

REFERENCES:
patent: 5322591 (1994-06-01), Harris et al.
"Application of hydro (solvent) thermal technique to the synthesis of metal arbonyl chalcogenide clusters."; Huang, et al; Inorganic Chemistry (1993), 32(6), pp. 821-825.

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