Ammonium vapor phase stripping of wafers

Details Ammonium vapor phase stripping of wafers Ammonium vapor phase stripping of wafers

1987-09-10

1989-09-19

Garvin, Patrick P.

Cleaning and liquid contact with solids

Processes

Including regeneration, purification, recovery or separation...

134 36, 134 37, 437229, B08B 500

Patent

active

048677990

ABSTRACT:
A method is set forth of treating a surface of an object to remove impurities. The object is positioned within a treating chamber with the surface exposed. Ammonia vapor is contacted with water vapor and/or hydrogen peroxide vapor adjacent to the surface to provide a hot mixture comprising at least ammonia and ammonium hydroxide. The hot mixture is impinged on the surface. The contacting is immediately prior to and/or simultaneous with the impinging. Resist is quickly stripped from the surfaces of semiconductors by this method. And, the stripping is very complete. Group I and Group II metals are also removed.

REFERENCES:
patent: 3727620 (1973-04-01), Orr
patent: 3769992 (1973-11-01), Wallestad
patent: 4264374 (1981-04-01), Beyer et al.
patent: 4519846 (1985-05-01), Aigo
patent: 4654116 (1987-03-01), Spacer
patent: 4695327 (1987-09-01), Grebinski

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