Ammonium borate containing compositions for stripping...

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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C510S176000, C510S178000, C510S212000, C510S432000, C510S420000, C510S465000, C510S499000, C252S079100, C252S079400, C134S001200, C134S001300

Reexamination Certificate

active

06875733

ABSTRACT:
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): an organic amine or mixture of amines 15-60 %, water 20-60 %, ammonium tetraborate or ammonium pentaborate 9-20 %, an optional polar organic solvent 0-15 %.

REFERENCES:
patent: 3887497 (1975-06-01), Ulvild
patent: 6224785 (2001-05-01), Wojtczak et al.

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