Ammonia gas passivation on nitride encapsulated devices

Details Ammonia gas passivation on nitride encapsulated devices Ammonia gas passivation on nitride encapsulated devices

2005-04-19

2005-04-19

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

C257S405000, C257S640000, C257S645000, C257S065000, C438S798000, C438S795000

Reexamination Certificate

active

06882031

ABSTRACT:
A passivation method includes disassociating ammonia so as to expose at least interfaces between silicon-containing and passivation structures to at least hydrogen species derived from the ammonia and forming an encapsulant layer that is positioned so as to substantially contain the hydrogen species in the presence of the interfaces. The hydrogen passivation reduces a concentration of dangling silicon bonds at the interfaces by as much as about two orders of magnitude or greater. The encapsulant layer, which may include silicon nitride, prevents hydrogen species from escaping therethrough as high temperature processes are subsequently conducted. Once high temperature processes have been completed, portions of the encapsulant layer may be removed, as needed, to provide access to features of the semiconductor device structure that underlie the encapsulant layer. Semiconductor device structures that have been passivated in such a manner are also disclosed.

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