Ammonia for use in manufacture of GaN-type compound...

Details Ammonia for use in manufacture of GaN-type compound... Ammonia for use in manufacture of GaN-type compound...

2006-04-18

2006-04-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S094000, C438S905000

Reexamination Certificate

active

07029940

ABSTRACT:
Ammonia for use in the manufacture of a GaN-type compound semiconductor, filled in a charging container18such that at least a part of the ammonia is liquid and the liquid phase ammonia has a water concentration determined by a Fourier-transform infrared spectroscopy (FT-IR) of 0.5 vol ppm or less, is introduced in the gaseous state into a reaction chamber11housing therein a substrate1,and a layer comprising a GaN-type compound started from this ammonia is formed on the substrate1.

REFERENCES:
patent: 3931631 (1976-01-01), Groves et al.
patent: 4001056 (1977-01-01), Groves et al.
patent: 5716588 (1998-02-01), Vergani et al.
patent: 5831277 (1998-11-01), Razeghi
patent: 5834331 (1998-11-01), Razeghi
patent: 6617261 (2003-09-01), Wong et al.
patent: 6719842 (2004-04-01), Hayashida et al.
patent: 0 662 339 (1995-01-01), None
patent: 08-201370 (1996-08-01), None
patent: 09-142833 (1997-06-01), None
patent: 09-251957 (1997-09-01), None
patent: WO 96/39265 (1996-12-01), None
Clean Technology, vol. 8, No. 4 (1998), pp. 52-53.
Patent Abstract of Japan, JP 09-251957, dated Sep. 22, 1997.
Hiebuhr et al, “Electrical and Optical Properties of Oxygen Doped GaN Grown by MOCVD using N20”, Journal of Electronic Materials, vol. 26, No. 10 (Oct. 1997).

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