Amino replacements for arsine, antimony and phosphine

Details Amino replacements for arsine, antimony and phosphine Amino replacements for arsine, antimony and phosphine

1990-09-21

1992-06-23

Kunemund, Robert

Fishing, trapping, and vermin destroying

156610, 156614, 437133, 437949, 437945, 437 81, 536 70, 4272481, 4272551, 148DIG16, 148DIG41, 148DIG56, 148DIG65, H01L 2120

Patent

active

051242788

ABSTRACT:
The present invention addresses the use of metalorganic amines as metallic donor source compounds in reactive deposition applications. More specifically, the present invention addresses the use of the amino-substituted metallic donor source compounds M(NR.sub.2).sub.3-x H.sub.x, where R is organic, alkyl or fluoroalkyl, and x is less than or equal to 2, and M=As, Sb or P, in processes requiring deposition of the corresponding element. These uses include a number of different processes; the metalorganic vapor phase epitaxy of compound semiconductor material such as GaAs, InP, AlGaAs, etc.; doping of SiO.sub.2 or borosilicate based glasses to enhance the reflow properties of the glass; in-situ n-type doping of silicon epitaxial material; sourcing of arsenic or phosphorus for ion implantation; chemical beam epitaxy (or MOMBE); and diffusion doping into electronic materials such as silicon dioxide, silicon and polycrystalline silcon. These types of materials generally have high volatilities, low toxicities, labile metal-ligand bonds, and stable decomposition products.
Specifically, the use of tris(dialkylamino) arsenic (As(NR.sub.2).sub.3) as a substitute for arsine in the manufacture of silicon integrated circuits, Group III-V compound semiconductors, optoelectronics and other electronic devices has been identified.

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