Aluminum target for magnetron sputtering and method of making sa

Details Aluminum target for magnetron sputtering and method of making sa Aluminum target for magnetron sputtering and method of making sa

1991-01-17

1992-02-11

Dean, R.

Metal treatment

Compositions

Heat treating

148 115A, 148437, 148438, 20429813, C22F 104, C23C 1400

Patent

active

050872974

ABSTRACT:
An aluminum target which comprises a body of aluminum or aluminum alloy having a grain size of less than 2 mm and a near ideal <110> fiber texture; and a method of making an aluminum target for magnetron sputtering which comprises: providing a body of fine grain aluminum or aluminum alloy having a grain size of less than 2 mm; heating the body to an elevated forging temperature in the range of 550.degree. F. to 900.degree. F.; and slow forging the body at the rate of 0.5 to 4 inches per minute to produce a preferred grain orientation in the <110> direction.

REFERENCES:
patent: 4072593 (1978-02-01), Diehl et al.
patent: 4281041 (1981-07-01), Koehler
patent: 4364792 (1982-12-01), Gliem et al.
patent: 4883686 (1989-11-01), Doehler et al.
patent: 4889772 (1989-12-01), Bergmann et al.
patent: 4960071 (1990-10-01), Akahori et al.
patent: 4961831 (1990-10-01), Bergmann et al.
patent: 4961832 (1990-10-01), Shagun et al.
patent: 4962461 (1990-10-01), Meyer et al.
patent: 4963239 (1990-10-01), Shimamure et al.
patent: 4963240 (1990-10-01), Fukasawa et al.
patent: 4963524 (1990-10-01), Yamazaki
patent: 4964962 (1990-10-01), Nobutani et al.
patent: 4964968 (1990-10-01), Arita
patent: 4964969 (1990-10-01), Kusakabe et al.
patent: 4965248 (1990-10-01), Poppe et al.
patent: 4966668 (1990-10-01), Veistinen
patent: 4966676 (1990-10-01), Fukasawa et al.
patent: 4966677 (1990-10-01), Aichert et al.
patent: 4968665 (1990-11-01), Ohuchi et al.
patent: 4969956 (1990-11-01), Kreider et al.
patent: 4971667 (1990-11-01), Yamazaki et al.
patent: 4971674 (1990-11-01), Hata
patent: 4972285 (1990-11-01), Otomo et al.
patent: 5032468 (1991-07-01), Dumont et al.
J. Vac. Sci. Technol. A5(4), Jul./Aug. 1987, pp. 1754-1757, Crystallographic Target Effects in Magnetron Sputtering.
J. Vac. Sci. Technol. A7 May/Jun. 1989, American Vacuum Society, Drift in Film Uniformity Arising from Sputtering Target Recrystallization.
Aluminum Alloys for Present and Future Devices, by Daniel R. Marx published by the Materials Research Corporation (1990).

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