Aluminum tantalum layers for electronic devices

Details Aluminum tantalum layers for electronic devices Aluminum tantalum layers for electronic devices

1973-10-19

1976-05-04

Weiffenbach, Cameron K.

Stock material or miscellaneous articles

Composite

Of metal

75138, 75174, 204192, 317258, 338308, B05D 512

Patent

active

039550397

ABSTRACT:
Al-Ta alloy films containing 2 to 20 atomic % of Ta in Al exhibit an improved temperature stability. An Al-alloy film containing 7 atomic % of Ta has a resistivity of 60.mu..OMEGA. cm, a temperature coefficient of resistance of +100 ppm.degree./K and a sparking potential of about 400 V when anodizing in 0.1% H.sub.3 PO.sub.4. An Al-alloy film containing 15 atomic % of Ta has a specific resistance of 200.mu..OMEGA. cm, a temperature coefficient of resistance of -100 ppm.degree./K and a sparking potential of about 300 V when anodizing in 0.1% H.sub.3 PO.sub.4. The alloy films are applied on a non-conductive substrate, as by RF-cathode sputtering in a desired thickness and are useful for thin-film circuits, discrete resistors, capacitors, etc.

REFERENCES:
patent: 3013193 (1961-12-01), Gorton et al.
patent: 3627577 (1971-12-01), Steidel
patent: 3737343 (1973-06-01), Basseches et al.
Steidel, C. A., Electrical and Structural Properties of Co-Sputtered Ta-Al Films, In J. Vac. Sci. Technol. 6(4):p. 694-698, 1969.

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