Aluminum-silicon alloy heatsink for semiconductor devices

Alloys or metallic compositions – Aluminum base – Copper containing

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357 67, 357 74, 357 80, 420548, 420528, 165905, 174 163, H01L 2336

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049262424

ABSTRACT:
A new material for use in the manufacture of semiconductor devices, a method of manufacturing the new material, and a heat radiator structure for a semiconductor device. The material is an aluminum alloy containing 30-60% by weight of Si and the remaining weight % is Al. The method of manufacture includes solidifying molten material into a powder and forming the powder by hot plastic working. The heat radiator structure includes a substrate of envelope material and an Al-Si alloy layer glued to the substrate through a function layer.

REFERENCES:
patent: 3154444 (1964-10-01), Wieland
patent: 3290188 (1966-12-01), Ross et al.
patent: 3791820 (1974-02-01), Werner
patent: 4517584 (1985-05-01), Matsushita
patent: 4663649 (1987-05-01), Suzuki et al.
patent: 4703339 (1987-10-01), Matsuo

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