Aluminum Schottky contacts and silicon-aluminum interconnects fo

Details Aluminum Schottky contacts and silicon-aluminum interconnects fo Aluminum Schottky contacts and silicon-aluminum interconnects fo

1978-05-31

1982-06-01

James, Andrew J.

357 15, 357 67, 357 65, H01L 2348, H01L 2946, H01L 2954

Patent

active

043331009

ABSTRACT:
A silicon substrate integrated circuit having a layer of aluminum forming Schottky contacts with lightly doped N conductivity regions and silicon doped aluminum forming ohmic contacts to heavily doped N conductivity regions and forming interconnects between contacts.

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