Aluminum scandium alloy interconnection

Details Aluminum scandium alloy interconnection Aluminum scandium alloy interconnection

1996-05-24

1998-09-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257771, H01L 2348, H01L 2352, H01L 2540

Patent

active

058048790

ABSTRACT:
An aluminum interconnection of the invention contains scandium as an impurity, so that the hardness of the interconnection in improved. Moreover, after a thin Al-Sc alloy film is formed, an annealing is performed 80 as to make the crystal grain larger than the width of the interconnection. The resulting Al interconnection has a high resistance against a stressmigration or electromigration, when a current stress in applied at a practical temperature in an LSI. This greatly contributes to the fabrication of a semiconductor device having a fine structure.

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Tohru Hara et al, "Stress in AL-SC Interconnection Layers" Jpn. J. Appl. Phys. vol. 32(1993) pp. 1394-1396.
Mayumi et al, IEEE/IRPS, 1987, pp. 15-21, "The Effect of Cu Addition to Al-Si Interconnects on Stress Induced Open-Circuits Failures".

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