Patent
1984-02-21
1985-07-23
James, Andrew J.
357 67, 357 65, H01H 2348, H01H 2946
Patent
active
045311447
ABSTRACT:
A metal interconnect structure for an integrated circuit with a layer of refractory metal over the structure to prevent formation of hillocks, thereby eliminating a hard anodization step. The refractory metal may be tantalum, titanium-tungsten alloys, hafnium, or other refractory metals which form insulating anodic oxides.
REFERENCES:
patent: 3654526 (1972-04-01), Cunningham et al.
patent: 3939047 (1976-02-01), Tsunemitsu et al.
patent: 4001871 (1977-01-01), Tsunemitsu
Burroughs Corporation
Fassbender Charles J.
James Andrew J.
Lamont John
Peterson Kevin R.
LandOfFree
Aluminum-refractory metal interconnect with anodized periphery does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Aluminum-refractory metal interconnect with anodized periphery, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum-refractory metal interconnect with anodized periphery will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-636595