Aluminum oxide layer bonding polymer resin layer to semiconducto

Details Aluminum oxide layer bonding polymer resin layer to semiconducto Aluminum oxide layer bonding polymer resin layer to semiconducto

1974-11-22

1977-08-02

Larkins, William D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 72, 427 82, H01L 2330, H01L 2350

Patent

active

040400832

ABSTRACT:
Disclosed is a semiconductor device including a Si body, and SiO.sub.2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO.sub.2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO.sub.2 layer and heating the solution at a temperature of 300.degree. C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO.sub.2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO.sub.2 layer.

REFERENCES:
patent: 3013901 (1961-12-01), Bugosh
patent: 3367025 (1968-02-01), Doyle
patent: 3767463 (1973-10-01), Aboaf et al.
patent: 3801880 (1974-04-01), Harada et al.

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