Aluminum nitride transitional layer for reducing dislocation...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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C257S103000

Reexamination Certificate

active

07915626

ABSTRACT:
A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.

REFERENCES:
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patent: 2005/0145864 (2005-07-01), Sugiyama et al.
Yoshihiro Kida et al, “Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AIGaN Using Epitaxial AIN as Underlying Layer”, Jpn. J. Appl. Phys. vol. 42, Part 2, No. 6A 2003, pp. L572-L574.
T. Wang et al, “Air-bridged lateral growth of an AI0.98Ga0.02N layer by introduction of porosity in an AIN buffer”, Applied Physics Letters, vol. 87, 2005, pp. 151906-1 through 151906-3.
Hiramatsu, Kazumasa et al, US20040157358A1: Group III nitride semiconductor film and its production method, six pages.

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