Aluminum nitride substrate and method of producing the same

Details Aluminum nitride substrate and method of producing the same Aluminum nitride substrate and method of producing the same

1995-06-13

1998-07-14

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of quartz or glass

428432, 428448, 428698, 428699, 428701, 428702, B32B 1500

Patent

active

057801622

ABSTRACT:
An aluminum nitride (AlN) substrate comprising an AIN sinter, an Al.sub.2 O.sub.3 layer provided on the sinter, and a glass-mixed Al.sub.2 O.sub.3 layer which is provided on the Al.sub.2 O.sub.3 layer and contains Al.sub.2 O.sub.3 and glass mixed therewith, preferably with an oxide particle-dispersed glass layer and a main glass layer provided on the glass-mixed Al.sub.2 O.sub.3 layer. The AlN substrate has heat dissipation properties closer to those of AlN itself, does not cause generation of air bubbles at the junction interface between the AlN sinter and the glass-containing layer, and has excellent surface smoothness and corrosion resistance. The very fine conductive layer, etc. may be readily and firmly formed on the substrate in a stable manner.

REFERENCES:
patent: 4783695 (1988-11-01), Eichelberger
patent: 5159432 (1992-10-01), Ohkubo
patent: 5352482 (1994-10-01), Kondo
patent: 5466488 (1995-11-01), Toyoda
patent: 5468694 (1995-11-01), Taguchi

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