Aluminum nitride substrate and method for producing same

Details Aluminum nitride substrate and method for producing same Aluminum nitride substrate and method for producing same

1993-08-11

1994-05-17

Turner, A. A.

Stock material or miscellaneous articles

Composite

Of inorganic material

174255, 174256, 174258, 428469, 428472, 428697, 428701, 428702, 428901, C04B 4151

Patent

active

053126980

ABSTRACT:
This invention is directed to a laser-subdivided aluminum nitride substrate wherein a resolidified layer formed at the laser score lines is constituted by one or more types of material selected from the group consisting of oxides, nitrides and oxynitrides of aluminum and of additives of said aluminum nitride substrate, and to a method of producing an aluminum nitride substrate wherein, subsequent to laser scoring the substrate, a heat treatment step at about 1000.degree. C. to 1800.degree. C. is carried out prior to the step of metallizing. This simple method provides an aluminum nitride substrate having a prescribed withstand-voltage characteristic.

REFERENCES:
patent: 4659611 (1987-04-01), Iwase et al.
patent: 4756976 (1988-07-01), Komeya et al.
patent: 4761345 (1988-08-01), Sato et al.
patent: 4863658 (1989-09-01), Sugiura et al.

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