Aluminum nitride sintered body, semiconductor manufacturing...

Details Aluminum nitride sintered body, semiconductor manufacturing... Aluminum nitride sintered body, semiconductor manufacturing...

2007-03-14

2009-12-08

Group, Karl E (Department: 1793)

Compositions: ceramic

Ceramic compositions

Refractory

C501S098500

Reexamination Certificate

active

07629282

ABSTRACT:
A conductive channel formed of an (Sm, Ce)Al11O18is interconnected in grain boundaries of aluminum nitride (AlN) particles, thereby reducing the temperature dependency of the volume resistivity of an AlN sintered body formed therefrom. At the same time, a solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving into the AlN particles, thereby maintaining a high volume resistivity within the AlN particles even at a high temperature.

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