Aluminum nitride sintered body and method of producing the same

Compositions: ceramic – Ceramic compositions – Refractory

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501 98, C04B 3558

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055299628

ABSTRACT:
An aluminum nitride sintered body comprising aluminum nitride crystals belonging to a Wurtzite hexagonal crystal system wherein the 3 axes a, b and c of the unit lattice of the crystal are defined such that the ratio b/a of the lengths of the axes b and a is 1,000 near the center of the crystal grain and lies within the range 0.997-1.003 in the vicinity of the grain boundary phase. Aluminum nitride sintered body is produced by sintering a molded body of a raw material powder having aluminum and nitrogen as its principal components at a temperature of 1700.degree.-1900.degree. C. in a non-oxidizing atmosphere having a partial pressure of carbon monoxide or carbon of not more than 200 ppm and then cooling the sintered body to 1500.degree. C. or a lower temperature at a rate of 5.degree. C./min or less. The aluminum nitride sintered body has a greatly improved thermal conductivity and, therefore, is suitable for heat slingers, substrates or the like for semiconductor devices.

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Oktmoto et al., Journal of the Ceramic Society of Japan, Internat, Edit. vol. 97, "Effect of Microstructure on Thermal Conductivity of Ain Ceramics", Dec. 1989.
Gmelins, Gmelins Handbuch Der Anorganischen Chemie, pp. 145-146, "Aluminium", 1934 (No month).

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