Aluminum nitride sintered body and method of preparing the same

Details Aluminum nitride sintered body and method of preparing the same Aluminum nitride sintered body and method of preparing the same

1993-09-01

1995-02-28

Jones, Deborah

Compositions: ceramic

Ceramic compositions

Refractory

C04B 3558

Patent

active

053937155

ABSTRACT:
An aluminum nitride sintered body has a high breakdown voltage for serving as a substrate material particularly suited to highly integrated circuits. The aluminum nitride sintered body contains titanium, which is included as a solid solute in the aluminum nitride crystal lattice in a weight ratio of at least 50 ppm and not more than 1000 ppm. The unpaired electron concentration in the sintered body as determined from an absorption spectrum of electron spin resonance is at least 1.times.10.sup.13 /g. At least 0.1 percent by weight and not more than 5.0 percent by weight, in terms of TiO.sub.2, of an oxy-nitride of titanium and aluminum exists in the aluminum nitride sintered body. The aluminum nitride sintered body has a breakdown voltage of 20 kV/mm. The sintered body is obtained by nitriding aluminum nitride raw material powder in a nitrogen atmosphere at a temperature of 800.degree. to 1400.degree. C., adding an oxy-nitride of titanium thereto with a sintering assistant, and sintering the mixture.

REFERENCES:
patent: 4997798 (1991-03-01), Okuno et al.
patent: 5001089 (1991-03-01), Kasori et al.
patent: 5219803 (1993-06-01), Yamakawa et al.
patent: 5264388 (1993-11-01), Yamakawa et al.
patent: 5273700 (1993-12-01), Yamakawa et al.

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