Aluminum nitride film substrate and process for producing same

Details Aluminum nitride film substrate and process for producing same Aluminum nitride film substrate and process for producing same

1995-02-24

1996-11-05

Turner, Archene

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

428408, 428698, 428704, C01B 21072

Patent

active

055716032

ABSTRACT:
An aluminum nitride film substrate comprising a single crystal diamond having, on its (111) plane, (1) a C-axis oriented aluminum nitride film or (2) an aluminum nitride single crystal film, the C-plane of the aluminum nitride single crystal being parallel to the (111) plane of said single crystal diamond an aluminum nitride film substrate comprising a substrate having thereon a (111) direction oriented diamond polycrystalline film, and further having thereon a C-axis oriented aluminum nitride film; and process for producing these aluminum nitride film substrate.

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S. Kaneko et al., Journ. of Cryst. Growth, vol. 115:163 (1991) 643-647, "Expitaxial growth of AIN film by low-pressure MOCVD in gas-beam-flow reactor".
A. H. Khan et al., SPIE, vol. 2151, Jan. 27, 1994, "AIN on diamond thin films grown by chemical vapor deposition methods".

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