Aluminum nitride ceramic, semiconductor manufacturing...

Details Aluminum nitride ceramic, semiconductor manufacturing... Aluminum nitride ceramic, semiconductor manufacturing...

2007-05-01

2007-05-01

Group, Karl (Department: 1755)

Plastic and nonmetallic article shaping or treating: processes

Outside of mold sintering or vitrifying of shaped inorganic...

Shaping or treating of multilayered, impregnated, or...

C264S643000, C427S376600, C427S255310, C427S430100, C501S098400, C501S098500

Reexamination Certificate

active

11153921

ABSTRACT:
An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.

REFERENCES:
patent: 6403510 (2002-06-01), Kuibira et al.
patent: 02009766 (1990-12-01), None
patent: H10-045461 (1998-02-01), None
patent: H11-209182 (1999-08-01), None
patent: 2001-240474 (2001-09-01), None
patent: 2002-097075 (2002-04-01), None
patent: 2003-335589 (2003-11-01), None

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