Aluminum nitride ceramic and semiconductor manufacturing member

Details Aluminum nitride ceramic and semiconductor manufacturing member Aluminum nitride ceramic and semiconductor manufacturing member

2007-02-21

2009-10-20

Group, Karl E (Department: 1793)

Compositions: ceramic

Ceramic compositions

Refractory

C501S098500, C428S398000, C428S702000, C428S703000

Reexamination Certificate

active

07605102

ABSTRACT:
An aluminum nitride ceramic including aluminum nitride grains and grain boundary phases comprises a grain boundary phase-rich layer including more amount of the grain boundary phases in a surface layer of the aluminum nitride ceramic than in an inside of the aluminum nitride ceramic. The grain boundary phases in the grain boundary phase-rich layer include at least one of rare earth element and alkali earth element.

REFERENCES:
patent: 6403510 (2002-06-01), Kuibira et al.
patent: 02009766 (1990-12-01), None
patent: 08-109069 (1996-04-01), None
patent: H10-045461 (1998-02-01), None
patent: H11-209182 (1999-08-01), None
patent: 2001-240474 (2001-09-01), None
patent: 2002-097075 (2002-04-01), None
patent: 2003-335589 (2003-11-01), None
Translation of JP 02009766, Dec. 1990.

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