Aluminum metaphosphate dopant sources

Details Aluminum metaphosphate dopant sources Aluminum metaphosphate dopant sources

1976-03-18

1976-12-21

Ozaki, G.

Metal treatment

Compositions

148186, 148187, 148188, 148189, 423305, 423311, 423314, 106 57, 106 54, 106 52, 252950, 252951, H01L 21225

Patent

active

039986683

ABSTRACT:
A solid source consisting essentially of high purity aluminum metaphosphate, Al(PO.sub.3).sub.3 is used for introducing elemental phosphorus into P-type silicon chips or wafers of semi-conductor grade. The aluminum metaphosphate functions as a source for the controlled release of P.sub.2 O.sub.5 vapors which are directed to the desired face of the silicon wafer. The reverse side of the silicon wafer receives little or no phosphorus and consequently retains its character as P-type silicon.

REFERENCES:
patent: 3314833 (1967-04-01), Arndt et al.
patent: 3530016 (1970-09-01), Joseph
patent: 3540895 (1970-11-01), Scheidler et al.
patent: 3751309 (1973-08-01), Derick et al.

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