Aluminum metallized layer formed on silicon wafer

Details Aluminum metallized layer formed on silicon wafer Aluminum metallized layer formed on silicon wafer

1989-01-23

1990-02-20

McDowell, Robert

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428650, B32B 1504

Patent

active

049025821

ABSTRACT:
A semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten, and phosphorus the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element, and the rest being aluminum. For example, the metallized layer may contain at least 0.04% and less than 0.10% by weight of titanium, 1.0% by weight of silicon, and the rest aluminum.

REFERENCES:
patent: 4527184 (1985-07-01), Fischer

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