Aluminum metallization method

Details Aluminum metallization method Aluminum metallization method

1992-03-09

1994-03-01

Maples, John S.

Fishing, trapping, and vermin destroying

437190, 437192, 437194, 437200, 437195, H01L 21441

Patent

active

052907317

ABSTRACT:
A metallization method for improving wettability and reactivity of a titanium (Ti) based barrier metal layer with respect to an aluminum (Al) based material and simultaneously achieving high barrier properties and superior step coverage, is proposed. An operation of increasing the crystal grain size of and planarizing at least a surface region of a barrier metal layer is effected simultaneously at the time of formation of a barrier metal layer. In this manner, Al migration characteristics and reactivity on a barrier metal surface are improved so that voids are not produced when an Al-based material layer is charged into small-sized connecting hole by a process sensitive to surface morphology, such as high temperature bias sputtering. By this technique, wettability of a material layer having distinctly inferior wettability with Al, while being excellent in barrier properties, such as a TiON layer, may be improved. As a smoothing operation, bias sputtering, laser irradiation and lamp annealing are proposed. Satisfactory results have been achieved on applying these to a Ti/TiON/Ti system, a Ti/TiON system or to a Ti/TiON/TiSi.sub.2 system.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4784973 (1988-11-01), Stevens et al.
patent: 5162262 (1992-11-01), Ajika et al.
Semiconductor World, Dec. 1989, pp. 186-188, (Japanese).
Hariu et al., "The Properties of Al-Cu/Ti Films Sputter Deposited at Elevated Temperatures and High DC Bias", IEEE/IRPS, Dec. 1989, pp. 210-214.
Extended Abstracts of the 37th Spring Meeting (1990) of the Japanese Society of Applied Physics and Related Societies, vol. 2, p. 592, Subject 29a-ZA-10, (Japanese).
Invention Association Technical Reports, Publication No. 90-16909, Sep. 20, 1990, (Japanese).

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