Aluminum line with crystal grains

Details Aluminum line with crystal grains Aluminum line with crystal grains

1989-11-29

1991-05-21

Mintel, William

Fishing, trapping, and vermin destroying

357 65, 357 71, 437957, 428469, 428472, H01L 2348

Patent

active

050180010

ABSTRACT:
An aluminum line including nitrogen formed as a film in a semiconductor integrated circuit is disclosed. Each crystal grain size of the aluminum line is lower than or equal to 0.3 .mu.m to suppress electromigration. A method of forming the aluminum line which can supress electromigration is also disclosed. The amount of an inert gas Q and the amount of a nitrogen gas Q.sub.N are controlled to satisfy "2.ltoreq.(Q.sub.N /Q).times.100.ltoreq.10".

REFERENCES:
patent: 3743894 (1973-07-01), Hall et al.
patent: 4726983 (1988-02-01), Harada et al.
patent: 4823182 (1989-04-01), Okumura
patent: 4845050 (1989-07-01), Kim et al.
Nikkei Microdevices, pp. 85-100, 1986.
IEEE 23rd Annual Proceedings Reliability Physics 1985, pp. 108-114, Hang et al., Breakdown Energy of Metal.

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