Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-06-25
1999-01-26
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257773, 257775, 257765, H01L 23532
Patent
active
058641793
ABSTRACT:
In a wiring system provided by the present invention, a first conductive wire is provided on a surface on one side of an dielectric layer of a semiconductor device, a second conductive wire made of an Al like metal is provided on a surface on the other side of the dielectric layer, a connection hole is drilled through the dielectric layer, the first and second conductive wires are connected to each other through the connection hole, and a compensation pattern made of the Al like metal is created in the second conductive wire, so that generation of voids in the Al like metal of the second conductive wire due to an electro-migration phenomenon is prevented, enhancing the reliability of the wire.
REFERENCES:
patent: 4561009 (1985-12-01), Yonezawa, et al.
patent: 5506450 (1996-04-01), Lee, et al.
Tao, et al., "Comparison of Electromigration reliability of Tonasten and Aluminum Vias under DC and Time-Varying current Stressing." Proceeding of the 30th IEEE International Reliability Physics Symposium, 1992, pp. 338-343.
Hardy David B.
Sony Corporation
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