Aluminum leadframes for semiconductor QFN/SON devices

Details Aluminum leadframes for semiconductor QFN/SON devices Aluminum leadframes for semiconductor QFN/SON devices

2006-02-02

2009-10-27

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

C257S672000, C257S676000, C257SE23035, C438S123000

Reexamination Certificate

active

07608916

ABSTRACT:
A post-mold plated semiconductor device has an aluminum leadframe (105) with a structure including a chip mount pad and a plurality of lead segments without cantilevered lead portions. A semiconductor chip (210) is attached to the chip mount pad, and conductive connections (212) span from the chip to the aluminum of the lead segments. Polymeric encapsulation material (220), such as a molding compound, covers the chip, the connections, and portions of the aluminum lead segments without leaving cantilevered segment portions. Preferably by electroless plating, a zinc layer (301) and a nickel layer (302) are on those portions of the lead segments, which are not covered by the encapsulation material including the aluminum segment surfaces (at203b) formed by the device singulation step, and a layer (303) of noble metal, preferably palladium, is on the nickel layer.

REFERENCES:
patent: 6518647 (2003-02-01), Tellkamp
patent: 6747343 (2004-06-01), Tellkamp
patent: 6933177 (2005-08-01), Tellkamp
patent: 7023074 (2006-04-01), Li et al.
patent: 2002/0061607 (2002-05-01), Akram
patent: 2003/0006492 (2003-01-01), Ogasawara et al.
patent: 2004/0183170 (2004-09-01), Tomimatsu
patent: 2005/0287709 (2005-12-01), Lee et al.

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