Aluminum-implant leakage reduction

Details Aluminum-implant leakage reduction Aluminum-implant leakage reduction

1990-07-12

1991-03-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 20, 437 27, 437 31, 437143, 437157, 437 986, H01L 2104

Patent

active

049993097

ABSTRACT:
An improved process is described for the formation of PNP transistor collector base junctions or PN junction capaciters in silicon monolithic integrated circuits that employ the ion implantation and diffusion of aluminum in these regions that are to contain high performance PNP transistors or capacitors. The process reduces or eliminates the leakage typically found in such devices.

REFERENCES:
patent: 4397887 (1983-08-01), Aytac
patent: 4910160 (1990-03-01), Jennings
patent: 4940671 (1990-07-01), Small

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