Aluminum germanium ohmic contacts to gallium arsenide

Details Aluminum germanium ohmic contacts to gallium arsenide Aluminum germanium ohmic contacts to gallium arsenide

1986-10-09

1991-02-19

Hille, Rolf

357 22, H01L 2354, H01L 2350

Patent

active

049948920

ABSTRACT:
Ohmic contacts are attached to n-type Gallium Arsenide with an alloy of Aluminum-Germanium. The contact is prepared by depositing by evaporation a sequence of 400 Angstroms of Germanium, 300 Angstroms of Nickel, and 2000 Angstroms of Aluminum and subsequent alloying.

REFERENCES:
patent: 3935586 (1976-01-01), Landheer et al.
patent: 4188710 (1980-02-01), Davey et al.
"Laser Annealed Ta/Ge and Ni/Ge Ohmic Contacts to GaAs"-Anderson et al., IEEE Electron Device Letters, vol. EDL-2, No. 5, 5/1981, pp. 115-117.

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