Aluminum-germanium alloys for VLSI metallization

Details Aluminum-germanium alloys for VLSI metallization Aluminum-germanium alloys for VLSI metallization

1993-08-18

1994-05-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437193, 437197, 437202, H01L 2144

Patent

active

053087941

ABSTRACT:
An apparatus and method for forming an interconnect through an opening or on an insulation layer with the coefficient of thermal expansion of the interconnect adjusted to reduce the thermal stress between the interconnect and the insulation layer is described incorporating the steps of forming a solid solution of a binary alloy including germanium and aluminum or a ternary alloy including aluminum, germanium and a third element, for example silicon, and forming a precipitate from the solid solution at a reduced temperature with respect to the temperature of forming the solid solution whereby the volume of the precipitate including germanium and the remaining solid solution is larger than the volume of the original solid solution.

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patent: 5001108 (1991-03-01), Taguchi
patent: 5169803 (1992-12-01), Miyakawa

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