Aluminum free group III-nitride based high electron mobility...

Details Aluminum free group III-nitride based high electron mobility... Aluminum free group III-nitride based high electron mobility...

2005-04-29

2009-11-10

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S024000, C257S194000, C257SE29246

Reexamination Certificate

active

07615774

ABSTRACT:
Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating aluminum free HEMTs are provided. In some embodiments, the aluminum free HEMTs include an aluminum free Group III-nitride barrier layer, an aluminum free Group III-nitride channel layer on the barrier layer and an aluminum free Group III-nitride cap layer on the channel layer.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
patent: 4471366 (1984-09-01), Delagebeaudeuf et al.
patent: 4727403 (1988-02-01), Hida et al.
patent: 4755867 (1988-07-01), Cheng
patent: 4788156 (1988-11-01), Stoneham et al.
patent: 4946547 (1990-08-01), Palmour et al.
patent: 5053348 (1991-10-01), Mishra et al.
patent: 5172197 (1992-12-01), Nguyen et al.
patent: 5192987 (1993-03-01), Khan et al.
patent: 5200022 (1993-04-01), Kong et al.
patent: 5210051 (1993-05-01), Carter, Jr.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5298445 (1994-03-01), Asano
patent: RE34861 (1995-02-01), Davis et al.
patent: 5389571 (1995-02-01), Takeuchi et al.
patent: 5393993 (1995-02-01), Edmond et al.
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5534462 (1996-07-01), Fiordalice et al.
patent: 5592501 (1997-01-01), Edmond et al.
patent: 5686737 (1997-11-01), Allen
patent: 5700714 (1997-12-01), Ogilhara et al.
patent: 5701019 (1997-12-01), Matsumoto et al.
patent: 5705827 (1998-01-01), Baba et al.
patent: 5804482 (1998-09-01), Konstantinov et al.
patent: 5885860 (1999-03-01), Weitzel et al.
patent: 5946547 (1999-08-01), Kim et al.
patent: 5990531 (1999-11-01), Taskar et al.
patent: 6028328 (2000-02-01), Riechert et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6051849 (2000-04-01), Davis et al.
patent: 6064082 (2000-05-01), Kawai et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6150680 (2000-11-01), Eastman et al.
patent: 6177685 (2001-01-01), Teraguchi et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6218680 (2001-04-01), Carter, Jr. et al.
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6376339 (2002-04-01), Linthicum et al.
patent: 6377596 (2002-04-01), Tanaka et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6429467 (2002-08-01), Ando
patent: 6448648 (2002-09-01), Boos
patent: 6462355 (2002-10-01), Linthicum et al.
patent: 6486042 (2002-11-01), Gehrke et al.
patent: 6489221 (2002-12-01), Gehrke et al.
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 6498050 (2002-12-01), Fujimoto
patent: 6515316 (2003-02-01), Wojtowicz et al.
patent: 6521514 (2003-02-01), Gehrke et al.
patent: 6545300 (2003-04-01), Gehrke et al.
patent: 6548333 (2003-04-01), Smith
patent: 6570192 (2003-05-01), Davis et al.
patent: 6582906 (2003-06-01), Cao et al.
patent: 6582986 (2003-06-01), Kong et al.
patent: 6586778 (2003-07-01), Linthicum et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6602763 (2003-08-01), Davis et al.
patent: 6602764 (2003-08-01), Linthicum et al.
patent: 6608327 (2003-08-01), Davis et al.
patent: 6621148 (2003-09-01), Linthicum et al.
patent: 6639255 (2003-10-01), Inoue et al.
patent: 6686261 (2004-02-01), Gehrke et al.
patent: 6706114 (2004-03-01), Mueller
patent: 6825559 (2004-11-01), Mishra et al.
patent: 6841001 (2005-01-01), Saxler
patent: 6849882 (2005-02-01), Chavarkar et al.
patent: 7352008 (2008-04-01), Kohn et al.
patent: 2001/0015446 (2001-08-01), Inoue et al.
patent: 2001/0020700 (2001-09-01), Inoue et al.
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2001/0040246 (2001-11-01), Ishii
patent: 2002/0008241 (2002-01-01), Edmond et al.
patent: 2002/0017696 (2002-02-01), Nakayama et al.
patent: 2002/0066908 (2002-06-01), Smith
patent: 2002/0079508 (2002-06-01), Yoshida
patent: 2002/0119610 (2002-08-01), Nishii et al.
patent: 2002/0167023 (2002-11-01), Charvarkar et al.
patent: 2003/0017683 (2003-01-01), Emrick et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2003/0102482 (2003-06-01), Saxler
patent: 2003/0123829 (2003-07-01), Taylor
patent: 2003/0145784 (2003-08-01), Thompson et al.
patent: 2003/0155578 (2003-08-01), Kohn et al.
patent: 2003/0157776 (2003-08-01), Smith
patent: 2003/0213975 (2003-11-01), Hirose et al.
patent: 2003/0218183 (2003-11-01), Micovic et al.
patent: 2004/0004223 (2004-01-01), Nagahama et al.
patent: 2004/0021152 (2004-02-01), Nguyen et al.
patent: 2004/0029330 (2004-02-01), Hussain et al.
patent: 2004/0061129 (2004-04-01), Saxler et al.
patent: 2004/0241970 (2004-12-01), Ring
patent: 0 334 006 (1989-09-01), None
patent: 0 563 847 (1993-10-01), None
patent: 10-050982 (1998-02-01), None
patent: 11261053 (1999-09-01), None
patent: 2001230407 (2001-08-01), None
patent: 2002016087 (2002-01-01), None
patent: 2004-342810 (2004-12-01), None
patent: WO 93/23877 (1993-11-01), None
patent: WO 01/57929 (2001-08-01), None
patent: WO 01/92428 (2001-12-01), None
patent: WO 01/92428 (2001-12-01), None
patent: WO 01/92428 (2001-12-01), None
patent: WO 03/049193 (2003-06-01), None
patent: WO 2004/008495 (2004-01-01), None
International Search Report and Written Opinion for PCT/US2006/006146; Date of mailing Sep. 25, 2006.
Kong et al. “A novel InxGa1−xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density”Solid-State Electronics 49:199-203 (2005).
Ambacher et al., “Two Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- and Ga-face AlGaN/GaN Heterostructures,”Journal of Applied Physics. vol. 85, No. 6, pp. 3222-3233 (Mar. 1999).
Ando et al., “10-W/mm AlGaN-GaN HFET With a Field Modulating Plate,”IEEE Electron Device Letters, 24(5), pp. 289-291 (May 2003).
Asbeck et al. “Piezoelectric charge densities in AlGaN/GaN HFETs,”Elecronics Letters. vol. 33, No. 14, pp. 1230-1231 (1997).
Beaumont, B. et al., “Epitaxial Lateral Overgrowth of GaN,”Phys. Stat. Sol. (b) 227, No. 1, pp. 1-43 (2001).
Ben-Yaacov et al., “AlGaN/GaN Current Aperture Vertical Electron Transistors with Regrown Channels,”Journal of Applied Physics. vol. 95, No. 4, pp. 2073-2078 (2004).
Breitschadel et al. “Minimization of Leakage Current of Recessed Gate AlGaN/GaN HEMTs by Optimizing the Dry-Etching Process,”Journal of Electronic Materials. vol. 28, No. 12, pp. 1420-1423 (1999).
Burm et al. “Recessed Gate GaN MODFETS,”Solid-State Electronics. vol. 41, No. 2, pp. 247-250 (1997).
Heikman, Sten J.,MOCVD Growth Technologies for Applications in AlGaN/GaN High Electron Mobility Transistors, Dissertation, University of California—Santa Barbara, Sep. 2002, 190 pages.
Parikh et al., “Development of Gallium Nitride Epitaxy and Associated Material-Device Correlation for RF, Microwave and MM-wave Applications,” Cree, Inc. (35 slides).
Ping et al. “DC and Microwave Performance of High-Current AlGaN/GaN Heterostructure Field Effect Transistors Grown on p-Type SiC Substrates,”IEEE Electron Device Letters. vol. 19, No. 2, pp. 54-56 (Feb. 1998).
Sheppard et al. “High Power Demonstration at 10 GHz with GaN/AlGaN HEMT Hybrid Amplifiers.” Presented at the 58thDRC, Denver, CO, Jun. 2000.
Sheppard et al. “Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide,”Materials Science Forum. vols. 338-342, pp. 1643-1646, (2000).
Shen et al., “High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation,”IEEE Electronics Device Letters. vol. 25, No. 1, pp. 7-9 (2004).
Shiojima et al., “Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure,”IEICE Trans. Electron., E83-C(12), (Dec. 2000).
Sriram et al. “RF Performance of AlGaN/GaN MODFET's on High Resistivity SiC Substrates,” Presentation at Materials Research Society Fall Symposium, 1997.
Sriram et al. “SiC and GaN Wide Bandgap Microwave Power Transistors,”IEEE Samoff Symposium, Pittsburgh, PA, Mar. 18, 1998.
Sullivan et al. “High-Power 10-GHz Operation of AlGaN HFET's on Insulating SiC,&

Affiliated with

Also associated with

Rating

Aluminum free group III-nitride based high electron mobility... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum free group III-nitride based high electron mobility..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum free group III-nitride based high electron mobility... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4077360