Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1997-02-18
1998-12-01
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257775, 257771, 257765, 257767, H01L 2348, H01L 2352
Patent
active
058443185
ABSTRACT:
A semiconductor contact structure formed by a method that deposits an aluminum film limiting the growth of voids and notches in the aluminum film and forms an aluminum film with a reduced amount of voids and notches. The first step of the method is to form an underlying layer upon which is deposited an aluminum film having a first thickness. The surface of the aluminum film is then exposed to a passivation species which coats the aluminum grains and precipitates at the grain boundaries so as to prevent grain movement. The exposure of the aluminum film to the passivation species reduces void formation and coalescence of the voids. An aluminum layer having a second thickness is then deposited over the initially deposited aluminum layer. In a second embodiment of the invention, the passivation species is deposited with MOCVD and to form an electromigration-resistant alloy. A third embodiment involves multiple depositions of aluminum, with exposure to a passivation species conducted after each deposition. Each deposition is also conducted at a successively lower temperature than the prior deposition.
REFERENCES:
patent: 5278449 (1994-01-01), Miyakawa
patent: 5341026 (1994-08-01), Harada et al.
patent: 5567987 (1996-10-01), Lee
patent: 5691571 (1997-11-01), Hirose et al.
Iyer Ravi
Sandhu Gurtej S.
Micro)n Technology, Inc.
Whitehead Carl W.
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