Stock material or miscellaneous articles – Composite – Of metal
Patent
1990-05-24
1992-09-15
Cashion, Jr., Merrell C.
Stock material or miscellaneous articles
Composite
Of metal
428409, 428457, 428480, 361323, B32B 1508
Patent
active
051477262
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an aluminum deposited film which is wound or stacked into capacitors etc., and a process for producing it.
BACKGROUND ART OF THE INVENTION
An aluminum deposited film is broadly used as a composite of electrodes and dielectrics for capacitors. Since aluminum is not good in chemical stability, however, an aluminum deposited layer generally lacks moisture resistance. Namely, because an aluminum deposited layer has low durability with respect to corrosion in a high-temperature and high-humidity atmosphere, the layer is liable to lose its function required as electrodes of a capacitor. Therefore, in a capacitor using such an aluminum deposited layer, generally its encapsulation is reinforced according to its environment in order to overcome the above defect. However, this reinforcement is often insufficient.
In a case where a deposited layer cannot be formed if the deposition material is directly deposited such as a case where zinc is attempted to be deposited directly on a polypropylene film or a paper, or in a case where formation of a deposited layer is slow and therefore lacks industrial productivity, a process for assisting the formation of the deposited layer by predepositing a metal such as copper or silver which is to become a nuclei for the formation of the zinc deposited layer (so-called, nucleation) is known, for example, as disclosed in JP-A-SHO-58-16415. However, the object, operation and advantage of nucleation are quite different from those of the present invention. Actually, even if nucleation is performed when zinc is deposited, increase of corrosion resistance of the deposited layer in a high-temperature and high-humidity atmosphere, as in the present invention, cannot be achieved.
DISCLOSURE OF THE INVENTION
An object of the present invention is to solve the above defects in conventional aluminum deposited film and to provide an aluminum deposited film which, when it is used for a capacitor, will have sufficiently high moisture resistance even if the encapsulation of the capacitor is simple, or has increased reliability of moisture resistance when encapsulation similar to that in a conventional capacitor is applied, and to provide a process for producing it.
The present invention provides an aluminum deposited film wherein a thin aluminum layer is formed on at least one surface of a plastic film by vacuum deposition characterized in that the surface area coefficient C of the surface of the deposited layer determined by equation (I) is not greater than 1.00.times.10.sup.-4.
(Where, La and Lb are determined from a roughness curve determined by a two beam type scanning electron microscope. La represents the projected length of the roughness curve on a base line and Lb represents the length of the roughness curve.)
Further, the present invention provides an aluminum deposited film wherein a thin aluminum layer is formed on at least one surface of a plastic film by vacuum deposition characterized in that the aluminum thin layer contains aluminum crystals, the [1, 1, 0] planes of which are oriented in parallel with the surface of the base film.
Still further, the present invention provides a process for producing an aluminum deposited film by vacuum deposition of aluminum on a plastic film characterized in that at least one metal selected from the group consisting of gold, silver, copper, nickel and tin is deposited on the plastic film using a deposition amount of not less than 0.1 mg/m.sup.2 and not greater than 50 mg/m.sup.2, and then aluminum is deposited on the deposited layer.
Furthermore, the present invention provides a process for producing an aluminum deposited film by vacuum deposition of aluminum on a plastic film characterized in that the surface of the plastic film on which aluminum is to be deposited (hereinafter referred to as the deposition-side surface) is plasma treated in an inert gas atmosphere with a degree of vacuum of 1.0.times.10.sup.-1 to 1.0.times.10.sup.-3 torr at an intensity of not less than 5 W mi
REFERENCES:
patent: 4568413 (1986-02-01), Toth et al.
patent: 4588654 (1986-05-01), Kobuke et al.
patent: 4816341 (1989-03-01), Nakayama et al.
patent: 4882653 (1989-11-01), Suzuki et al.
Deguchi Yukichi
Suzuki Motoyuki
Cashion Jr. Merrell C.
Le Hoa T.
Miller Austin R.
Toray Industries Inc.
LandOfFree
Aluminum deposited film and process for producing it does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Aluminum deposited film and process for producing it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum deposited film and process for producing it will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-735552