Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-12-11
2011-11-29
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S529000, C438S381000, C365S148000
Reexamination Certificate
active
08067815
ABSTRACT:
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a first electrode and a second electrode. The memory device further includes a diode and an anti-fuse metal-oxide memory element comprising aluminum oxide and copper oxide. The diode and the metal-oxide memory element are arranged in electrical series between the first electrode and the second electrode.
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Chang Kuo-Pin
Chen Yi-Chou
Chien Wei-Chih
Hsieh Kuang-Yeu
Lai Erh-Kun
Haynes Beffel & Wolfeld LLP
Macronix International Co., Lt.d.
Wojciechowicz Edward
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