Aluminum-copper alloy evaporated films with low via resistance

Details Aluminum-copper alloy evaporated films with low via resistance Aluminum-copper alloy evaporated films with low via resistance

1982-09-20

1983-07-12

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

156643, 204192E, 427 91, 427 96, 427 99, 430314, H01L 21285

Patent

active

043930964

ABSTRACT:
Controlling Al.sub.2 Cu precipitation in copper doped aluminum by evaporating the aluminum metallurgy containing 3 to 4% copper at about 210.degree. C. on SiO.sub.2 coated semiconductor devices. In multilevel metallurgy sintering can be optionally performed at 400.degree. C. for 75 minutes to cause intermetal diffusion at vias between the metallurgy levels.

REFERENCES:
patent: 3382568 (1968-05-01), Kuiper
patent: 3631305 (1971-12-01), Bhatt et al.
patent: 3716469 (1973-02-01), Bhatt et al.
patent: 3725309 (1973-04-01), Ames et al.
patent: 3743894 (1973-07-01), Hall et al.
patent: 3830657 (1974-08-01), Farrar
patent: 3987216 (1976-10-01), Bhatia et al.
patent: 4062720 (1977-12-01), Alcorn et al.
patent: 4070501 (1978-01-01), Corbin et al.
patent: 4184909 (1980-01-01), Chang et al.
Howard et al., "Intermetallic Compounds of Al and Transition Metals: Effect of Electromigration in 1-2-NM-Wide Lines", J. Appl. Phys. 49(7), Jul., 1978, pp. 4083-4093.

Affiliated with

Also associated with

Rating

Aluminum-copper alloy evaporated films with low via resistance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum-copper alloy evaporated films with low via resistance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum-copper alloy evaporated films with low via resistance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-198758